Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering

K. Zou, X. Hong, D. Keefer, J. Zhu

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Abstract

We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20000cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300A K, surface phonon modes of the HfO2 film centered at 54A meV limit the mobility to approximately 20000cm2/Vs.

Original languageEnglish (US)
Article number126601
JournalPhysical Review Letters
Volume105
Issue number12
DOIs
StatePublished - Sep 16 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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