Deposition of high quality Sol-Gel oxides on silicon

W. L. Warren, P. M. Lenahan, C. J. Brinker, C. S. Ashley, S. T. Reed

Research output: Contribution to journalArticle

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Abstract

We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalJournal of Electronic Materials
Volume19
Issue number5
DOIs
StatePublished - May 1 1990

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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