Deposition of high quality Sol-Gel oxides on silicon

W. L. Warren, Patrick M. Lenahan, C. J. Brinker, C. S. Ashley, S. T. Reed

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalJournal of Electronic Materials
Volume19
Issue number5
DOIs
StatePublished - May 1 1990

Fingerprint

Silicon
Oxides
Sol-gels
gels
oxides
silicon
Silicates
Thin films
Interface states
Voltage measurement
thin films
electrical measurement
silicates
Capacitance
capacitance
traps
Substrates

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Warren, W. L. ; Lenahan, Patrick M. ; Brinker, C. J. ; Ashley, C. S. ; Reed, S. T. / Deposition of high quality Sol-Gel oxides on silicon. In: Journal of Electronic Materials. 1990 ; Vol. 19, No. 5. pp. 425-428.
@article{b259855a56d54b0ab9d44cb904c7f8ec,
title = "Deposition of high quality Sol-Gel oxides on silicon",
abstract = "We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.",
author = "Warren, {W. L.} and Lenahan, {Patrick M.} and Brinker, {C. J.} and Ashley, {C. S.} and Reed, {S. T.}",
year = "1990",
month = "5",
day = "1",
doi = "10.1007/BF02658001",
language = "English (US)",
volume = "19",
pages = "425--428",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

Warren, WL, Lenahan, PM, Brinker, CJ, Ashley, CS & Reed, ST 1990, 'Deposition of high quality Sol-Gel oxides on silicon', Journal of Electronic Materials, vol. 19, no. 5, pp. 425-428. https://doi.org/10.1007/BF02658001

Deposition of high quality Sol-Gel oxides on silicon. / Warren, W. L.; Lenahan, Patrick M.; Brinker, C. J.; Ashley, C. S.; Reed, S. T.

In: Journal of Electronic Materials, Vol. 19, No. 5, 01.05.1990, p. 425-428.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Deposition of high quality Sol-Gel oxides on silicon

AU - Warren, W. L.

AU - Lenahan, Patrick M.

AU - Brinker, C. J.

AU - Ashley, C. S.

AU - Reed, S. T.

PY - 1990/5/1

Y1 - 1990/5/1

N2 - We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.

AB - We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.

UR - http://www.scopus.com/inward/record.url?scp=0025430206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025430206&partnerID=8YFLogxK

U2 - 10.1007/BF02658001

DO - 10.1007/BF02658001

M3 - Article

VL - 19

SP - 425

EP - 428

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -