TY - JOUR
T1 - Deposition profile of rf-magnetron-sputtered Ba TiO 3 thin films
AU - Lee, Nam Yang
AU - Sekine, Tomoyuki
AU - Ito, Yukio
AU - Uchino, Kenji
PY - 1994/3
Y1 - 1994/3
N2 - BaTiO3 thin films were fabricated using an rf-magnetron sputtering technique and an oxide target. In spite of depositing on an amorphous fused quartz substrate, the preferentially oriented thin films were obtained without any post-annealing process. The preferred orientation of the thin films changed with sputtering gas pressure, gas composition and substrate temperature. At a lower gas pressure, the thin films crystallized well and preferentially oriented to the [100] direction. With increasing gas pressure, the preferred orientation changed to (110). On the other hand, at a lower substrate temperature or higher argon partial pressure, the preferred orientation changed to (111). The variation of the preferred orientation, lattice constant, and crystallite size with sputtering conditions was explained by assuming a thermal-vibration model.
AB - BaTiO3 thin films were fabricated using an rf-magnetron sputtering technique and an oxide target. In spite of depositing on an amorphous fused quartz substrate, the preferentially oriented thin films were obtained without any post-annealing process. The preferred orientation of the thin films changed with sputtering gas pressure, gas composition and substrate temperature. At a lower gas pressure, the thin films crystallized well and preferentially oriented to the [100] direction. With increasing gas pressure, the preferred orientation changed to (110). On the other hand, at a lower substrate temperature or higher argon partial pressure, the preferred orientation changed to (111). The variation of the preferred orientation, lattice constant, and crystallite size with sputtering conditions was explained by assuming a thermal-vibration model.
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U2 - 10.1143/JJAP.33.1484
DO - 10.1143/JJAP.33.1484
M3 - Article
AN - SCOPUS:0028404315
VL - 33
SP - 1484
EP - 1488
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3R
ER -