Deposition profile of rf-magnetron-sputtered Ba TiO 3 thin films

Nam Yang Lee, Tomoyuki Sekine, Yukio Ito, Kenji Uchino

Research output: Contribution to journalArticle

54 Scopus citations

Abstract

BaTiO3 thin films were fabricated using an rf-magnetron sputtering technique and an oxide target. In spite of depositing on an amorphous fused quartz substrate, the preferentially oriented thin films were obtained without any post-annealing process. The preferred orientation of the thin films changed with sputtering gas pressure, gas composition and substrate temperature. At a lower gas pressure, the thin films crystallized well and preferentially oriented to the [100] direction. With increasing gas pressure, the preferred orientation changed to (110). On the other hand, at a lower substrate temperature or higher argon partial pressure, the preferred orientation changed to (111). The variation of the preferred orientation, lattice constant, and crystallite size with sputtering conditions was explained by assuming a thermal-vibration model.

Original languageEnglish (US)
Pages (from-to)1484-1488
Number of pages5
JournalJapanese Journal of Applied Physics
Volume33
Issue number3R
DOIs
Publication statusPublished - Mar 1994

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this