Depth profiling free carbon in silicon carbide

T. E. Paulson, V. J. Bojan, R. M. Wichterman, C. G. Pantano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high-mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of Cn-molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C6- and 96C8-species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS-0 and SCS-6 silicon carbide fibers.

Original languageEnglish (US)
Pages (from-to)1267-1274
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

Fingerprint

Depth profiling
Silicon carbide
silicon carbides
Carbon
carbon
Secondary ion mass spectrometry
secondary ion mass spectrometry
silicon carbide
Molecular mass
carbides
negative ions
mass spectra
Negative ions
Vapors
Ions
vapors
coatings
Coatings
Molecules
fibers

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Paulson, T. E. ; Bojan, V. J. ; Wichterman, R. M. ; Pantano, C. G. / Depth profiling free carbon in silicon carbide. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1995 ; Vol. 13, No. 3. pp. 1267-1274.
@article{b5b0fda3f8d64056aa0b5230730e29a3,
title = "Depth profiling free carbon in silicon carbide",
abstract = "A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high-mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of Cn-molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C6- and 96C8-species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS-0 and SCS-6 silicon carbide fibers.",
author = "Paulson, {T. E.} and Bojan, {V. J.} and Wichterman, {R. M.} and Pantano, {C. G.}",
year = "1995",
month = "5",
doi = "10.1116/1.579872",
language = "English (US)",
volume = "13",
pages = "1267--1274",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

Depth profiling free carbon in silicon carbide. / Paulson, T. E.; Bojan, V. J.; Wichterman, R. M.; Pantano, C. G.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 13, No. 3, 05.1995, p. 1267-1274.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Depth profiling free carbon in silicon carbide

AU - Paulson, T. E.

AU - Bojan, V. J.

AU - Wichterman, R. M.

AU - Pantano, C. G.

PY - 1995/5

Y1 - 1995/5

N2 - A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high-mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of Cn-molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C6- and 96C8-species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS-0 and SCS-6 silicon carbide fibers.

AB - A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high-mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of Cn-molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C6- and 96C8-species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS-0 and SCS-6 silicon carbide fibers.

UR - http://www.scopus.com/inward/record.url?scp=21844500381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844500381&partnerID=8YFLogxK

U2 - 10.1116/1.579872

DO - 10.1116/1.579872

M3 - Article

AN - SCOPUS:21844500381

VL - 13

SP - 1267

EP - 1274

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -