Depth profiling free carbon in silicon carbide

T. E. Paulson, V. J. Bojan, R. M. Wichterman, C. G. Pantano

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Abstract

A fingerprint for free carbon was identified from the negative ion mass spectra of various carbon and silicon carbide standards. It was found that high-mass carbon molecular species can be used to distinguish free carbon in silicon carbide. Secondary ion mass spectrometry (SIMS) depth profiling (12 keV Cs+ primary beam, negative SIMS mode) was used to calculate the useful yield of negatively charged molecular carbon ions from carbon (in various forms) and silicon carbide. The useful yield ratio of Cn-molecules from carbon to SiC increased with increasing n, meaning higher mass molecular carbon species are more likely to originate from free carbon than silicon carbide. 72C6- and 96C8-species were used to depth profile free carbon in chemically vapor deposited SiC/C coatings on SCS-0 and SCS-6 silicon carbide fibers.

Original languageEnglish (US)
Pages (from-to)1267-1274
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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