Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory

Rekha Govindaraj, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Content Addressable Memory (CAM) is widely used in pattern matching, internet data processing and many other fields where searching a specific pattern of data is a major operation. Conventional CAMs suffer from area, power, and speed limitations. We propose a magnetic tunnel junction (MTJ) based Ternary CAM (TCAM). The proposed TCAM cell is 127 percent (33 percent) area efficient compared to conventional CMOS TCAM (spintronic TCAMs). We analyzed sense margin of the proposed TCAM with respect to 16, 32, 64, 128 and 256-bit words sizes in 22nm predictive technology. Simulations indicated reliable sense margin of 50mV even at 0.7V supply voltage. The worst case sense delay and sense margin of 256-bit TCAM is found to be 263ps and 220mV respectively at 1V supply voltage. The average search power consumed is 13mW and the search energy is 4.7fJ per bit search. The write time is 4ns and the write energy is 0.69pJ per bit.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages309-314
Number of pages6
ISBN (Electronic)9781467380096
DOIs
StatePublished - Sep 21 2015
Event20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015 - Rome, Italy
Duration: Jul 22 2015Jul 24 2015

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
Volume2015-September
ISSN (Print)1533-4678

Other

Other20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015
CountryItaly
CityRome
Period7/22/157/24/15

Fingerprint

Associative storage
Tunnel junctions
Computer aided manufacturing
Magnetoelectronics
Pattern matching
Electric potential
Internet

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Govindaraj, R., & Ghosh, S. (2015). Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015 (pp. 309-314). [7273532] (Proceedings of the International Symposium on Low Power Electronics and Design; Vol. 2015-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLPED.2015.7273532
Govindaraj, Rekha ; Ghosh, Swaroop. / Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory. Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 309-314 (Proceedings of the International Symposium on Low Power Electronics and Design).
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Govindaraj, R & Ghosh, S 2015, Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory. in Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015., 7273532, Proceedings of the International Symposium on Low Power Electronics and Design, vol. 2015-September, Institute of Electrical and Electronics Engineers Inc., pp. 309-314, 20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015, Rome, Italy, 7/22/15. https://doi.org/10.1109/ISLPED.2015.7273532

Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory. / Govindaraj, Rekha; Ghosh, Swaroop.

Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 309-314 7273532 (Proceedings of the International Symposium on Low Power Electronics and Design; Vol. 2015-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Govindaraj R, Ghosh S. Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 309-314. 7273532. (Proceedings of the International Symposium on Low Power Electronics and Design). https://doi.org/10.1109/ISLPED.2015.7273532