Design and assembly of high-aspect-ratio silica-encapsulated nanostructures for nanoelectronics applications

Nina Ivanivna Kovtyukhova

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter summarizes our progress in design and assembly of new metal nanowire-based insulated interconnects and coaxially gated in-wire thin film transistors with the electrical characteristics closely approaching those of established large-scale planar thin film devices. Our approach relies on combining templated synthesis of nanostructures with wet successive adsorption techniques and electroplating. The strong advantages of this approach are (i) a possibility to easily incorporate various electronic materials into a single nanostructure, (ii) control of the device geometric parameters with sub-nanometer precision, and (iii) using low-energy-cost and environmentally friendly synthetic methods.

Original languageEnglish (US)
Title of host publicationNanomaterials and Supramolecular Structures
Subtitle of host publicationPhysics, Chemistry, and Applications
PublisherSpringer Netherlands
Pages329-345
Number of pages17
ISBN (Print)9789048123087
DOIs
StatePublished - Dec 1 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Chemistry(all)

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