@article{c42e30aaf20a4510bdf52f6e9588f3ff,
title = "Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs",
author = "Xueqing Li and Juejian Wu and Kai Ni and Sumitha George and Kaisheng Ma and John Sampson and Gupta, {Sumeet Kumar} and Yongpan Liu and Huazhong Yang and Suman Datta and Vijaykrishnan Narayanan",
note = "Funding Information: We thank Prof. Sharon Hu, Prof. Sayeef Salahuddin, Prof. Asif Khan, and Prof. Peter Asbeck for device support and useful discussions. This work was supported in part by NSFC under Grant 61674094 and Grant 61720106013, in part by NSF Expedition, in part by SRC Centers (LEAST, ASCENT, and CRISP), and in part by BNRist and the Beijing Innovation Center for Future Chips.",
year = "2019",
month = jun,
doi = "10.1109/MDAT.2019.2902094",
language = "English (US)",
volume = "36",
pages = "39--45",
journal = "IEEE Design and Test",
issn = "2168-2356",
publisher = "IEEE Computer Society",
number = "3",
}