Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs

Xueqing Li, Juejian Wu, Kai Ni, Sumitha George, Kaisheng Ma, John Sampson, Sumeet Kumar Gupta, Yongpan Liu, Huazhong Yang, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticlepeer-review

9 Scopus citations
Original languageEnglish (US)
Article number8653894
Pages (from-to)39-45
Number of pages7
JournalIEEE Design and Test
Volume36
Issue number3
DOIs
StatePublished - Jun 2019

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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