| Original language | English (US) |
|---|---|
| Article number | 8653894 |
| Pages (from-to) | 39-45 |
| Number of pages | 7 |
| Journal | IEEE Design and Test |
| Volume | 36 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jun 1 2019 |
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All Science Journal Classification (ASJC) codes
- Software
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
}
Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs. / Li, Xueqing; Wu, Juejian; Ni, Kai; George, Sumitha; Ma, Kaisheng; Sampson, John Morgan; Gupta, Sumeet Kumar; Liu, Yongpan; Yang, Huazhong; Datta, Suman; Narayanan, Vijaykrishnan.
In: IEEE Design and Test, Vol. 36, No. 3, 8653894, 01.06.2019, p. 39-45.Research output: Contribution to journal › Article
TY - JOUR
T1 - Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs
AU - Li, Xueqing
AU - Wu, Juejian
AU - Ni, Kai
AU - George, Sumitha
AU - Ma, Kaisheng
AU - Sampson, John Morgan
AU - Gupta, Sumeet Kumar
AU - Liu, Yongpan
AU - Yang, Huazhong
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
PY - 2019/6/1
Y1 - 2019/6/1
UR - http://www.scopus.com/inward/record.url?scp=85062424172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062424172&partnerID=8YFLogxK
U2 - 10.1109/MDAT.2019.2902094
DO - 10.1109/MDAT.2019.2902094
M3 - Article
VL - 36
SP - 39
EP - 45
JO - IEEE Design and Test
JF - IEEE Design and Test
SN - 2168-2356
IS - 3
M1 - 8653894
ER -