Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs

Xueqing Li, Juejian Wu, Kai Ni, Sumitha George, Kaisheng Ma, John Morgan Sampson, Sumeet Kumar Gupta, Yongpan Liu, Huazhong Yang, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish (US)
Article number8653894
Pages (from-to)39-45
Number of pages7
JournalIEEE Design and Test
Volume36
Issue number3
DOIs
StatePublished - Jun 1 2019

Fingerprint

Logic gates
Field effect transistors
Ferroelectric materials
Hysteresis
Switches
Data storage equipment
Sensors

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Li, Xueqing ; Wu, Juejian ; Ni, Kai ; George, Sumitha ; Ma, Kaisheng ; Sampson, John Morgan ; Gupta, Sumeet Kumar ; Liu, Yongpan ; Yang, Huazhong ; Datta, Suman ; Narayanan, Vijaykrishnan. / Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs. In: IEEE Design and Test. 2019 ; Vol. 36, No. 3. pp. 39-45.
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author = "Xueqing Li and Juejian Wu and Kai Ni and Sumitha George and Kaisheng Ma and Sampson, {John Morgan} and Gupta, {Sumeet Kumar} and Yongpan Liu and Huazhong Yang and Suman Datta and Vijaykrishnan Narayanan",
year = "2019",
month = "6",
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Li, X, Wu, J, Ni, K, George, S, Ma, K, Sampson, JM, Gupta, SK, Liu, Y, Yang, H, Datta, S & Narayanan, V 2019, 'Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs', IEEE Design and Test, vol. 36, no. 3, 8653894, pp. 39-45. https://doi.org/10.1109/MDAT.2019.2902094

Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs. / Li, Xueqing; Wu, Juejian; Ni, Kai; George, Sumitha; Ma, Kaisheng; Sampson, John Morgan; Gupta, Sumeet Kumar; Liu, Yongpan; Yang, Huazhong; Datta, Suman; Narayanan, Vijaykrishnan.

In: IEEE Design and Test, Vol. 36, No. 3, 8653894, 01.06.2019, p. 39-45.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs

AU - Li, Xueqing

AU - Wu, Juejian

AU - Ni, Kai

AU - George, Sumitha

AU - Ma, Kaisheng

AU - Sampson, John Morgan

AU - Gupta, Sumeet Kumar

AU - Liu, Yongpan

AU - Yang, Huazhong

AU - Datta, Suman

AU - Narayanan, Vijaykrishnan

PY - 2019/6/1

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U2 - 10.1109/MDAT.2019.2902094

DO - 10.1109/MDAT.2019.2902094

M3 - Article

VL - 36

SP - 39

EP - 45

JO - IEEE Design and Test

JF - IEEE Design and Test

SN - 2168-2356

IS - 3

M1 - 8653894

ER -