Design of a shallow thermally stable ohmic contact to p-type InGaSb

S. H. Wang, Suzanne E. Mohney, B. A. Hull, B. R. Bennett

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Design of a shallow thermally stable ohmic contact to p-type InGaSb was presented. The factors which effect the contact resistance, thermal stability, and shallowness of the contacts were investigated. The thermal stability of the Pd/W/Au contacts was also investigated. Results showed that the Pd/W/Au contacts remained shallow and exhibited no measurable electrical degradation when aged at 250°C in N2 for 100h.

Original languageEnglish (US)
Pages (from-to)633-640
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
StatePublished - Mar 1 2003

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Ohmic contacts
electric contacts
Thermodynamic stability
thermal stability
Contact resistance
contact resistance
Degradation
degradation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Design of a shallow thermally stable ohmic contact to p-type InGaSb. / Wang, S. H.; Mohney, Suzanne E.; Hull, B. A.; Bennett, B. R.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 2, 01.03.2003, p. 633-640.

Research output: Contribution to journalArticle

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