Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

Jiamian Hu, Zheng Li, Long-qing Chen, Ce Wen Nan

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.

Original languageEnglish (US)
Pages (from-to)2869-2873
Number of pages5
JournalAdvanced Materials
Volume24
Issue number21
DOIs
StatePublished - Jun 5 2012

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Enhanced magnetoresistance
Magnetic films
Data storage equipment
Electric potential
Ferroelectric materials
Energy utilization
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer. / Hu, Jiamian; Li, Zheng; Chen, Long-qing; Nan, Ce Wen.

In: Advanced Materials, Vol. 24, No. 21, 05.06.2012, p. 2869-2873.

Research output: Contribution to journalArticle

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