Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure

Shengxi Huang, Ximeng Guan, Jinyu Zhang, Victor Moroz, Yan Wang, Zhiping Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-Ail-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable am bipolar transfer characteristics of conventional tFETs, while maintaining the advantage of small subthreshold swing of less than 60mV/dec. For the first time, an all-tFET inverter is demonstrated to exhibit excellent switching behaviors, outperforming both the homojunction Si NW-tFET and the conventional CMOS in inverters with the same gate length and supply voltage.

Original languageEnglish (US)
Title of host publication2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China
Duration: Dec 15 2010Dec 17 2010

Publication series

Name2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Other

Other2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
CountryChina
CityHong Kong
Period12/15/1012/17/10

Fingerprint

Field effect transistors
Nanowires
Heterojunctions
Doping (additives)
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Huang, S., Guan, X., Zhang, J., Moroz, V., Wang, Y., & Yu, Z. (2010). Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 [5713687] (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713687
Huang, Shengxi ; Guan, Ximeng ; Zhang, Jinyu ; Moroz, Victor ; Wang, Yan ; Yu, Zhiping. / Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).
@inproceedings{0ea9e96484c84501a1fe9fa5a3d32924,
title = "Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure",
abstract = "With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-Ail-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable am bipolar transfer characteristics of conventional tFETs, while maintaining the advantage of small subthreshold swing of less than 60mV/dec. For the first time, an all-tFET inverter is demonstrated to exhibit excellent switching behaviors, outperforming both the homojunction Si NW-tFET and the conventional CMOS in inverters with the same gate length and supply voltage.",
author = "Shengxi Huang and Ximeng Guan and Jinyu Zhang and Victor Moroz and Yan Wang and Zhiping Yu",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/EDSSC.2010.5713687",
language = "English (US)",
isbn = "9781424499977",
series = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",
booktitle = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

}

Huang, S, Guan, X, Zhang, J, Moroz, V, Wang, Y & Yu, Z 2010, Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713687, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, 12/15/10. https://doi.org/10.1109/EDSSC.2010.5713687

Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. / Huang, Shengxi; Guan, Ximeng; Zhang, Jinyu; Moroz, Victor; Wang, Yan; Yu, Zhiping.

2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713687 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure

AU - Huang, Shengxi

AU - Guan, Ximeng

AU - Zhang, Jinyu

AU - Moroz, Victor

AU - Wang, Yan

AU - Yu, Zhiping

PY - 2010/12/1

Y1 - 2010/12/1

N2 - With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-Ail-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable am bipolar transfer characteristics of conventional tFETs, while maintaining the advantage of small subthreshold swing of less than 60mV/dec. For the first time, an all-tFET inverter is demonstrated to exhibit excellent switching behaviors, outperforming both the homojunction Si NW-tFET and the conventional CMOS in inverters with the same gate length and supply voltage.

AB - With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-Ail-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable am bipolar transfer characteristics of conventional tFETs, while maintaining the advantage of small subthreshold swing of less than 60mV/dec. For the first time, an all-tFET inverter is demonstrated to exhibit excellent switching behaviors, outperforming both the homojunction Si NW-tFET and the conventional CMOS in inverters with the same gate length and supply voltage.

UR - http://www.scopus.com/inward/record.url?scp=79952518087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952518087&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2010.5713687

DO - 10.1109/EDSSC.2010.5713687

M3 - Conference contribution

AN - SCOPUS:79952518087

SN - 9781424499977

T3 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

BT - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

ER -

Huang S, Guan X, Zhang J, Moroz V, Wang Y, Yu Z. Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713687. (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713687