Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure

Shengxi Huang, Ximeng Guan, Jinyu Zhang, Victor Moroz, Yan Wang, Zhiping Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-Ail-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable am bipolar transfer characteristics of conventional tFETs, while maintaining the advantage of small subthreshold swing of less than 60mV/dec. For the first time, an all-tFET inverter is demonstrated to exhibit excellent switching behaviors, outperforming both the homojunction Si NW-tFET and the conventional CMOS in inverters with the same gate length and supply voltage.

Original languageEnglish (US)
Title of host publication2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China
Duration: Dec 15 2010Dec 17 2010

Publication series

Name2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Other

Other2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
CountryChina
CityHong Kong
Period12/15/1012/17/10

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Huang, S., Guan, X., Zhang, J., Moroz, V., Wang, Y., & Yu, Z. (2010). Design of complementary GAA-NW tunneling-FETs of axial Si-Ge heterostructure. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 [5713687] (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713687