We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) how to design a GaN/AlGaN/GaN structure to form a high-density 2-D electron gas and to scale it to multiple vertically stacked channels with less risk in reaching the critical thickness limited by the strain in epitaxy; 2) how to reach charge balance and how sensitive is the breakdown voltage with respect to the doping imbalance; and 3) how to ensure that the processes of depleting and accumulating electrons and holes in the structure are fast enough for practical power switching applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering