Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Xueqing Li, Kaisheng Ma, Sumitha George, Win San Khwa, John Morgan Sampson, Sumeet Kumar Gupta, Yongpan Liu, Meng Fan Chang, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Nonvolatile SRAM (nvSRAM) has emerged as a promising approach to reducing the standby energy consumption by storing the state into an in situ nonvolatile memory element and shutting down the power supply. Existing nvSRAM solutions based on a nonvolatile backup in magnetic tunnel junction and ReRAM, however, are costly in backup and restore energy due to static current. This cost results in a long break-even time (BET) when compared with a lowered voltage standby volatile SRAM. This brief proposes an nvSRAM based on ferroelectric FETs (FeFETs) that are capable of fully avoiding such static current. A simple differential backup and restore circuitry is proposed, achieving sub-fJ/cell total energy per backup and restore operation at the 10-nm node. This leads to hundreds of times BET improvement over existing ReRAM nvSRAM solutions. This nvSRAM also indicates the future FeFET design trends for such memory-logic synergy.

Original languageEnglish (US)
Article number7938658
Pages (from-to)3037-3040
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume64
Issue number7
DOIs
StatePublished - Jul 1 2017

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Static random access storage
Ferroelectric materials
Data storage equipment
Tunnel junctions
Field effect transistors
Energy utilization
Electric potential
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Li, Xueqing ; Ma, Kaisheng ; George, Sumitha ; Khwa, Win San ; Sampson, John Morgan ; Gupta, Sumeet Kumar ; Liu, Yongpan ; Chang, Meng Fan ; Datta, Suman ; Narayanan, Vijaykrishnan. / Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 7. pp. 3037-3040.
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Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore. / Li, Xueqing; Ma, Kaisheng; George, Sumitha; Khwa, Win San; Sampson, John Morgan; Gupta, Sumeet Kumar; Liu, Yongpan; Chang, Meng Fan; Datta, Suman; Narayanan, Vijaykrishnan.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 7, 7938658, 01.07.2017, p. 3037-3040.

Research output: Contribution to journalArticle

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AU - Gupta, Sumeet Kumar

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