Design of overcurrent protection circuit for GaN HEMT

Bo Huang, Yan Li, Trillion Q. Zheng, Yajing Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent fault happened within the frequency of a few hundred kilohertz to several megahertz. Through analysis and experiment, it has been shown that the proposed circuit has the advantages of short-time protection, simple circuit structure and strong capability of anti-interference as well as a higher reliability in high frequency and small and medium-sized power applications.

Original languageEnglish (US)
Title of host publication2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2844-2848
Number of pages5
ISBN (Electronic)9781479956982
DOIs
StatePublished - Nov 11 2014

Publication series

Name2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014

Fingerprint

Overcurrent protection
High electron mobility transistors
Networks (circuits)
Gallium nitride
Microprocessor chips
Electric potential
Experiments

All Science Journal Classification (ASJC) codes

  • Fuel Technology
  • Energy Engineering and Power Technology

Cite this

Huang, B., Li, Y., Zheng, T. Q., & Zhang, Y. (2014). Design of overcurrent protection circuit for GaN HEMT. In 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014 (pp. 2844-2848). [6953784] (2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2014.6953784
Huang, Bo ; Li, Yan ; Zheng, Trillion Q. ; Zhang, Yajing. / Design of overcurrent protection circuit for GaN HEMT. 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2844-2848 (2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014).
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Huang, B, Li, Y, Zheng, TQ & Zhang, Y 2014, Design of overcurrent protection circuit for GaN HEMT. in 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014., 6953784, 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014, Institute of Electrical and Electronics Engineers Inc., pp. 2844-2848. https://doi.org/10.1109/ECCE.2014.6953784

Design of overcurrent protection circuit for GaN HEMT. / Huang, Bo; Li, Yan; Zheng, Trillion Q.; Zhang, Yajing.

2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2844-2848 6953784 (2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent fault happened within the frequency of a few hundred kilohertz to several megahertz. Through analysis and experiment, it has been shown that the proposed circuit has the advantages of short-time protection, simple circuit structure and strong capability of anti-interference as well as a higher reliability in high frequency and small and medium-sized power applications.

AB - A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent fault happened within the frequency of a few hundred kilohertz to several megahertz. Through analysis and experiment, it has been shown that the proposed circuit has the advantages of short-time protection, simple circuit structure and strong capability of anti-interference as well as a higher reliability in high frequency and small and medium-sized power applications.

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Huang B, Li Y, Zheng TQ, Zhang Y. Design of overcurrent protection circuit for GaN HEMT. In 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2844-2848. 6953784. (2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014). https://doi.org/10.1109/ECCE.2014.6953784