Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

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Abstract

The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

Original languageEnglish (US)
Pages (from-to)755-760
Number of pages6
JournalSemiconductor Science and Technology
Volume20
Issue number8
DOIs
StatePublished - Aug 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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