Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

Original languageEnglish (US)
Pages (from-to)755-760
Number of pages6
JournalSemiconductor Science and Technology
Issue number8
StatePublished - Aug 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs'. Together they form a unique fingerprint.

Cite this