Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Ximeng Guan, Shengxi Huang, Jiahao Kang, Jinyu Zhang, Zhiping Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hückel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high Ion/Ioff ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.

Original languageEnglish (US)
Title of host publication2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages199-202
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
Duration: Oct 26 2010Oct 29 2010

Publication series

Name2010 14th International Workshop on Computational Electronics, IWCE 2010

Other

Other2010 14th International Workshop on Computational Electronics, IWCE 2010
CountryItaly
CityPisa
Period10/26/1010/29/10

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All Science Journal Classification (ASJC) codes

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Guan, X., Huang, S., Kang, J., Zhang, J., & Yu, Z. (2010). Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 199-202). [5677982] (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677982