Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Ximeng Guan, Shengxi Huang, Jiahao Kang, Jinyu Zhang, Zhiping Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hückel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high Ion/Ioff ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.

Original languageEnglish (US)
Title of host publication2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages199-202
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
Duration: Oct 26 2010Oct 29 2010

Publication series

Name2010 14th International Workshop on Computational Electronics, IWCE 2010

Other

Other2010 14th International Workshop on Computational Electronics, IWCE 2010
CountryItaly
CityPisa
Period10/26/1010/29/10

Fingerprint

Nanoribbons
Field effect transistors
Green's function
Graphene
Electric potential
Energy gap
Hamiltonians
Doping (additives)
Design optimization
Networks (circuits)
Ions

All Science Journal Classification (ASJC) codes

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Guan, X., Huang, S., Kang, J., Zhang, J., & Yu, Z. (2010). Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 199-202). [5677982] (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677982
Guan, Ximeng ; Huang, Shengxi ; Kang, Jiahao ; Zhang, Jinyu ; Yu, Zhiping. / Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. 2010 14th International Workshop on Computational Electronics, IWCE 2010. 2010. pp. 199-202 (2010 14th International Workshop on Computational Electronics, IWCE 2010).
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abstract = "GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended H{\"u}ckel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high Ion/Ioff ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.",
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Guan, X, Huang, S, Kang, J, Zhang, J & Yu, Z 2010, Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. in 2010 14th International Workshop on Computational Electronics, IWCE 2010., 5677982, 2010 14th International Workshop on Computational Electronics, IWCE 2010, pp. 199-202, 2010 14th International Workshop on Computational Electronics, IWCE 2010, Pisa, Italy, 10/26/10. https://doi.org/10.1109/IWCE.2010.5677982

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. / Guan, Ximeng; Huang, Shengxi; Kang, Jiahao; Zhang, Jinyu; Yu, Zhiping.

2010 14th International Workshop on Computational Electronics, IWCE 2010. 2010. p. 199-202 5677982 (2010 14th International Workshop on Computational Electronics, IWCE 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Guan X, Huang S, Kang J, Zhang J, Yu Z. Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation. In 2010 14th International Workshop on Computational Electronics, IWCE 2010. 2010. p. 199-202. 5677982. (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677982