Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

R. M. Chu, Y. D. Zheng, Y. G. Zhou, S. L. Gu, B. Shen, R. Zhang

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

In this paper, we took a brief investigation on the properties of two-dimensional electron gas (2DEG) in AlGaN/InGaN/GaN heterostructures. Band profiles and the 2DEG distribution were calculated by self-consistently solving the Schrödinger and Poisson equations. Our calculated results indicate that the 2DEG concentration can be considerably increased with the incorporation of an InGaN layer. Quantum confinement, and thereby the 2DEG distribution are very sensitive to the strain of the incorporated InGaN layer. Hence one can design the 2DEG by incorporating proper InGaN layer into the conventional AlGaN/GaN heterostructures. These novel features are attributed to the strong polarization effect in AlGaN/InGaN/GaN heterostructures.

Original languageEnglish (US)
Pages (from-to)207-210
Number of pages4
JournalOptical Materials
Volume23
Issue number1-2
DOIs
StatePublished - 2003
EventProceedings of the 8th ICEM 2002 - XI'an, China
Duration: Jun 10 2002Jun 14 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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