An approach using two terminal current measurements obtained in a cyclic current-voltage sweeping procedure, is shown to be very useful in detecting damage in poly-Si/ultra-thin SiO2/substrate Si gate structures subjected to dry etching. The current peaks seen in this approach, are shown to be due to displacement currents and to have different features depending on whether the capacitor structures were subjected to plasma charging currents, or plasma photon/particle exposure during etching. A model is presented relating these features to localized states at or near the SiO2/substrate interface.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Applied Physics|
|State||Published - Feb 15 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)