Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions

C. J. Cochrane, P. M. Lenahan

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11 Citations (Scopus)

Abstract

We report on the detection of a zero-field spin dependent current response in Si based metal-oxide-semiconducting field-effect transistors. We argue that this phenomenon results from spin dependent recombination (SDR) due to the mixing of the energy levels involved in the singlet and triplet pairs which form prior to recombination involving Pb centers at the Si/SiO 2 interface. We demonstrate a very strong correlation between the zero-field response, the low-field magnetic resonant response, and electrical gated current interface trap measurement. Our results provide strong evidence that previous magnetoresistance measurements made in silicon devices arise from deep level defects that cause SDR.

Original languageEnglish (US)
Article number053506
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
StatePublished - Jul 29 2013

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metal oxides
field effect transistors
interactions
energy levels
traps
causes
defects
silicon
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We report on the detection of a zero-field spin dependent current response in Si based metal-oxide-semiconducting field-effect transistors. We argue that this phenomenon results from spin dependent recombination (SDR) due to the mixing of the energy levels involved in the singlet and triplet pairs which form prior to recombination involving Pb centers at the Si/SiO 2 interface. We demonstrate a very strong correlation between the zero-field response, the low-field magnetic resonant response, and electrical gated current interface trap measurement. Our results provide strong evidence that previous magnetoresistance measurements made in silicon devices arise from deep level defects that cause SDR.",
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AB - We report on the detection of a zero-field spin dependent current response in Si based metal-oxide-semiconducting field-effect transistors. We argue that this phenomenon results from spin dependent recombination (SDR) due to the mixing of the energy levels involved in the singlet and triplet pairs which form prior to recombination involving Pb centers at the Si/SiO 2 interface. We demonstrate a very strong correlation between the zero-field response, the low-field magnetic resonant response, and electrical gated current interface trap measurement. Our results provide strong evidence that previous magnetoresistance measurements made in silicon devices arise from deep level defects that cause SDR.

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