Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's.

Jean Claude Ramirez, Patrick J. McNally, Lisa S. Cooper, James J. Rosenberg, L. B. Freund, Thomas Nelson Jackson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The results of a combined experimental and analytical investigation of the effects of mechanical stress on DC electrical parameters, particularly threshold voltage, in MESFETs are reported. The theoretical aspect of this study involves a two-dimensional finite-element simulation of the device structure on which measurements were made. The substrate stresses and resultant piezoelectric charge distributions calculated in this study take into account the two-dimensional nature of the geometry of the gate. The experimental portion of this study involves measurement of DC parameters of devices using external mechanical loads that simulate mechanical stresses that arise during device processing. Measurements confirm the existence of a piezoelectrically induced threshold voltage shift. A comparison between the approximate line load method of modeling substrate stress fields, and the finite-element method used in this study shows that the piezoelectric charge densities predicted by two models are substantially different. This results from the fact that the simplifying assumptions used to construct the line load model are inappropriate for accurately determining stress fields beneath micrometer and submicrometer gates.

Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume35
Issue number8
StatePublished - Aug 1 1988

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Threshold voltage
threshold voltage
Numerical models
field effect transistors
stress distribution
shift
Loads (forces)
direct current
charge distribution
micrometers
finite element method
Charge distribution
Substrates
Charge density
geometry
gallium arsenide
Finite element method
simulation
Geometry
Processing

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The results of a combined experimental and analytical investigation of the effects of mechanical stress on DC electrical parameters, particularly threshold voltage, in MESFETs are reported. The theoretical aspect of this study involves a two-dimensional finite-element simulation of the device structure on which measurements were made. The substrate stresses and resultant piezoelectric charge distributions calculated in this study take into account the two-dimensional nature of the geometry of the gate. The experimental portion of this study involves measurement of DC parameters of devices using external mechanical loads that simulate mechanical stresses that arise during device processing. Measurements confirm the existence of a piezoelectrically induced threshold voltage shift. A comparison between the approximate line load method of modeling substrate stress fields, and the finite-element method used in this study shows that the piezoelectric charge densities predicted by two models are substantially different. This results from the fact that the simplifying assumptions used to construct the line load model are inappropriate for accurately determining stress fields beneath micrometer and submicrometer gates.",
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Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's. / Ramirez, Jean Claude; McNally, Patrick J.; Cooper, Lisa S.; Rosenberg, James J.; Freund, L. B.; Jackson, Thomas Nelson.

In: IEEE Transactions on Electron Devices, Vol. 35, No. 8, 01.08.1988.

Research output: Contribution to journalArticle

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