Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

H. Y. Lee, Shujun Zhang, Thomas R. Shrout

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs
StatePublished - Dec 1 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics
Volume2

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, H. Y., Zhang, S., & Shrout, T. R. (2008). Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 [4693824] (IEEE International Symposium on Applications of Ferroelectrics; Vol. 2). https://doi.org/10.1109/ISAF.2008.4693824