Development of novel flexible black silicon

Hao Mei, Chao Wang, Jimmy Yao, Yun Ching Chang, Jiping Cheng, Yong Zhu, Shizhuo Yin, Claire Luo

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.

Original languageEnglish (US)
Pages (from-to)1072-1075
Number of pages4
JournalOptics Communications
Volume284
Issue number4
DOIs
StatePublished - Feb 15 2011

Fingerprint

Silicon
silicon
insulators
Ultrashort pulses
spikes
Silicon Dioxide
Absorption spectra
Etching
absorbers
flexibility
generators
Optical properties
Silica
etching
wafers
silicon dioxide
Scanning
absorption spectra
optical properties
scanning

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

Mei, H., Wang, C., Yao, J., Chang, Y. C., Cheng, J., Zhu, Y., ... Luo, C. (2011). Development of novel flexible black silicon. Optics Communications, 284(4), 1072-1075. https://doi.org/10.1016/j.optcom.2010.10.024
Mei, Hao ; Wang, Chao ; Yao, Jimmy ; Chang, Yun Ching ; Cheng, Jiping ; Zhu, Yong ; Yin, Shizhuo ; Luo, Claire. / Development of novel flexible black silicon. In: Optics Communications. 2011 ; Vol. 284, No. 4. pp. 1072-1075.
@article{5fbe2223c85b401a8941c5ed7fb32b68,
title = "Development of novel flexible black silicon",
abstract = "We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97{\%} in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.",
author = "Hao Mei and Chao Wang and Jimmy Yao and Chang, {Yun Ching} and Jiping Cheng and Yong Zhu and Shizhuo Yin and Claire Luo",
year = "2011",
month = "2",
day = "15",
doi = "10.1016/j.optcom.2010.10.024",
language = "English (US)",
volume = "284",
pages = "1072--1075",
journal = "Optics Communications",
issn = "0030-4018",
publisher = "Elsevier",
number = "4",

}

Mei, H, Wang, C, Yao, J, Chang, YC, Cheng, J, Zhu, Y, Yin, S & Luo, C 2011, 'Development of novel flexible black silicon', Optics Communications, vol. 284, no. 4, pp. 1072-1075. https://doi.org/10.1016/j.optcom.2010.10.024

Development of novel flexible black silicon. / Mei, Hao; Wang, Chao; Yao, Jimmy; Chang, Yun Ching; Cheng, Jiping; Zhu, Yong; Yin, Shizhuo; Luo, Claire.

In: Optics Communications, Vol. 284, No. 4, 15.02.2011, p. 1072-1075.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Development of novel flexible black silicon

AU - Mei, Hao

AU - Wang, Chao

AU - Yao, Jimmy

AU - Chang, Yun Ching

AU - Cheng, Jiping

AU - Zhu, Yong

AU - Yin, Shizhuo

AU - Luo, Claire

PY - 2011/2/15

Y1 - 2011/2/15

N2 - We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.

AB - We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.

UR - http://www.scopus.com/inward/record.url?scp=78649741622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649741622&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2010.10.024

DO - 10.1016/j.optcom.2010.10.024

M3 - Article

VL - 284

SP - 1072

EP - 1075

JO - Optics Communications

JF - Optics Communications

SN - 0030-4018

IS - 4

ER -

Mei H, Wang C, Yao J, Chang YC, Cheng J, Zhu Y et al. Development of novel flexible black silicon. Optics Communications. 2011 Feb 15;284(4):1072-1075. https://doi.org/10.1016/j.optcom.2010.10.024