Development of structure-property relationships in disordered Zirconia thin films for high energy density MIM capacitors

Engineering & Materials Science

• Zirconia 83%
• Thin films 66%
• Relaxation 65%
• Dielectric losses 59%
• Capacitors 55%
• Annealing 46%
• Dielectric films 34%
• Magnetron sputtering 31%
• Electric space charge 31%
• Charge transfer 30%
• Oxide films 29%
• Thick films 28%
• Crystallinity 28%
• Temperature 28%
• Spectroscopy 26%
• Gold 25%
• Crystalline materials 24%
• Activation energy 24%
• Electric fields 21%
• Oxides 20%
• Electrodes 17%
• Acoustic impedance 17%

Physics & Astronomy

• MIM (semiconductors) 100%
• zirconium oxides 71%
• capacitors 61%
• flux density 56%
• conductivity 46%
• direct current 41%
• thin films 36%
• dielectric loss 33%
• alternating current 31%
• extremely low frequencies 23%
• annealing 21%
• amorphous materials 20%
• thick films 16%
• crystallinity 15%
• space charge 15%
• magnetron sputtering 14%
• gold 13%
• impedance 13%
• activation energy 12%
• oxides 10%
• electrodes 10%
• electric fields 10%
• room temperature 9%
• spectroscopy 9%
• temperature 5%

Chemical Compounds

• Capacitor 72%
• Conductivity 46%
• Dielectric Loss 40%
• Energy 33%
• Annealing 27%
• Relaxation Frequency 27%
• Dielectric Film 25%
• Liquid Film 25%
• Space Charge 22%
• Magnetron Sputtering 20%
• Electric Field 15%
• Impedance Spectroscopy 13%
• Crystallinity 13%
• Charge Transfer 12%
• Reaction Activation Energy 12%
• Amorphous Material 12%
• Ambient Reaction Temperature 9%
• Oxide 9%
• Behavior as Electrode 8%