Development of wafer-scale graphene RF electronics

J. S. Moon; D. Curtis; M. Hu; D. Wong; C. McGuire; P. M. Campbell; G. Jernigan; J. Tedesco; B. VanMil; R. Myers-Ward; C. Eddy; D. K. Gaskill; J. Robinson; M. Fanton; P. Asbeck

Development of wafer-scale graphene RF electronics

J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, D. K. Gaskill, J. Robinson, M. Fanton, P. Asbeck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.

Original language	English (US)
Title of host publication	European Microwave Week 2010
Subtitle of host publication	Connecting the World, EuMIC 2010 - Conference Proceedings
Pages	254-257
Number of pages	4
State	Published - Dec 6 2010
Event	13th European Microwave Week 2010: Connecting the World, EuMIC 2010 - Paris, France Duration: Sep 26 2010 → Oct 1 2010

Publication series

Name	European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Other

Other	13th European Microwave Week 2010: Connecting the World, EuMIC 2010
Country/Territory	France
City	Paris
Period	9/26/10 → 10/1/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Moon, J. S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P. M., Jernigan, G., Tedesco, J., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D. K., Robinson, J., Fanton, M., & Asbeck, P. (2010). Development of wafer-scale graphene RF electronics. In European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings (pp. 254-257). [5613657] (European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings).

@inproceedings{c8d3474fab664bf8987731e9fd87d279,

title = "Development of wafer-scale graphene RF electronics",

abstract = "In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.",

author = "Moon, {J. S.} and D. Curtis and M. Hu and D. Wong and C. McGuire and Campbell, {P. M.} and G. Jernigan and J. Tedesco and B. VanMil and R. Myers-Ward and C. Eddy and Gaskill, {D. K.} and J. Robinson and M. Fanton and P. Asbeck",

year = "2010",

month = dec,

day = "6",

language = "English (US)",

isbn = "9782874870156",

series = "European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings",

pages = "254--257",

booktitle = "European Microwave Week 2010",

note = "13th European Microwave Week 2010: Connecting the World, EuMIC 2010 ; Conference date: 26-09-2010 Through 01-10-2010",

}

Moon, JS, Curtis, D, Hu, M, Wong, D, McGuire, C, Campbell, PM, Jernigan, G, Tedesco, J, VanMil, B, Myers-Ward, R, Eddy, C, Gaskill, DK, Robinson, J , Fanton, M & Asbeck, P 2010, Development of wafer-scale graphene RF electronics. in European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings., 5613657, European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings, pp. 254-257, 13th European Microwave Week 2010: Connecting the World, EuMIC 2010, Paris, France, 9/26/10.

Development of wafer-scale graphene RF electronics. / Moon, J. S.; Curtis, D.; Hu, M. et al.
European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings. 2010. p. 254-257 5613657 (European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Development of wafer-scale graphene RF electronics

AU - Moon, J. S.

AU - Curtis, D.

AU - Hu, M.

AU - Wong, D.

AU - McGuire, C.

AU - Campbell, P. M.

AU - Jernigan, G.

AU - Tedesco, J.

AU - VanMil, B.

AU - Myers-Ward, R.

AU - Eddy, C.

AU - Gaskill, D. K.

AU - Robinson, J.

AU - Fanton, M.

AU - Asbeck, P.

PY - 2010/12/6

Y1 - 2010/12/6

N2 - In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.

AB - In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.

UR - http://www.scopus.com/inward/record.url?scp=78649555627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649555627&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78649555627

SN - 9782874870156

T3 - European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

SP - 254

EP - 257

BT - European Microwave Week 2010

T2 - 13th European Microwave Week 2010: Connecting the World, EuMIC 2010

Y2 - 26 September 2010 through 1 October 2010

ER -

Development of wafer-scale graphene RF electronics

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

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