Development of wafer-scale graphene RF electronics

J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, D. K. Gaskill, J. Robinson, M. Fanton, P. Asbeck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.

Original languageEnglish (US)
Title of host publicationEuropean Microwave Week 2010
Subtitle of host publicationConnecting the World, EuMIC 2010 - Conference Proceedings
Pages254-257
Number of pages4
StatePublished - Dec 6 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC 2010 - Paris, France
Duration: Sep 26 2010Oct 1 2010

Publication series

NameEuropean Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Other

Other13th European Microwave Week 2010: Connecting the World, EuMIC 2010
CountryFrance
CityParis
Period9/26/1010/1/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Moon, J. S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P. M., Jernigan, G., Tedesco, J., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D. K., Robinson, J., Fanton, M., & Asbeck, P. (2010). Development of wafer-scale graphene RF electronics. In European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings (pp. 254-257). [5613657] (European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings).