Development of ZnO-InP heterojunction solar cells for thin film photovoltaics

Kyle H. Montgomery, Qiong Nian, Xin Zhao, Haoyu U. Li, Gary J. Cheng, Thomas Nelson Jackson, Jerry M. Woodall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages524-527
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Heterojunctions
Solar cells
Zinc Oxide
Thin films
Substrates
Zinc oxide
Fermi level
Aluminum
Conversion efficiency
Film thickness
Costs
Energy gap
Earth (planet)
Wavelength

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Montgomery, K. H., Nian, Q., Zhao, X., Li, H. U., Cheng, G. J., Jackson, T. N., & Woodall, J. M. (2014). Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 524-527). [6924974] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924974
Montgomery, Kyle H. ; Nian, Qiong ; Zhao, Xin ; Li, Haoyu U. ; Cheng, Gary J. ; Jackson, Thomas Nelson ; Woodall, Jerry M. / Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 524-527 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).
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Montgomery, KH, Nian, Q, Zhao, X, Li, HU, Cheng, GJ, Jackson, TN & Woodall, JM 2014, Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924974, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 524-527, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6924974

Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. / Montgomery, Kyle H.; Nian, Qiong; Zhao, Xin; Li, Haoyu U.; Cheng, Gary J.; Jackson, Thomas Nelson; Woodall, Jerry M.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 524-527 6924974 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.

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Montgomery KH, Nian Q, Zhao X, Li HU, Cheng GJ, Jackson TN et al. Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 524-527. 6924974. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6924974