Development toward wafer-scale graphene RF electronics

J. S. Moon, D. Curtis, M. Hu, D. Wong, P. M. Campbell, G. Jernigan, J. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, D. K. Gaskill, J. Robinson, M. Fanton, P. Asbeck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500 cm2 V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.

Original languageEnglish (US)
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages1-3
Number of pages3
DOIs
StatePublished - Apr 23 2010
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: Jan 11 2010Jan 13 2010

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period1/11/101/13/10

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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