Device-circuit analysis of double-gate MOSFETs and schottky-barrier FETs

A comparison study for sub-10-nm technologies

Woo Suhl Cho, Sumeet Kumar Gupta, Kaushik Roy

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    In this paper, we explore the design space of two possible candidate FETs for sub-10-nm technologies-FinFET like double gate MOSFETs (DGFETs) and Schottky-barrier (SB) devices. Though SB devices are expected to have lower ON current, their lower source/drain resistance (RS/D) can be important in scaled technologies. We evaluate the suitability of the optimized devices for logic and memory designs in the sub-10-nm technologies using a comparative device-circuit analysis based on nonequilibrium Green's function-based transport models and HSPICE circuit simulation. The devices are optimized with gate-to-source (S)/drain (D) underlap, and proper body thickness to suppress direct source-to-drain tunneling (DSDT). Our analysis shows that introduction of gate-to-S/D underlap provides the benefit of reducing DSDT, while reduced body thickness provides a tradeoff between low DSDT and high RS/D. Results also show that DGFETs provide higher drive strength even with larger RS/D. As a result, DGFET-based logic shows higher performance, and better read stability for memory while SBFET-based memory shows higher write stability.

    Original languageEnglish (US)
    Article number6957548
    Pages (from-to)4025-4031
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume61
    Issue number12
    DOIs
    StatePublished - Dec 1 2014

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    Electric network analysis
    Field effect transistors
    Data storage equipment
    Circuit simulation
    Green's function

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

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    title = "Device-circuit analysis of double-gate MOSFETs and schottky-barrier FETs: A comparison study for sub-10-nm technologies",
    abstract = "In this paper, we explore the design space of two possible candidate FETs for sub-10-nm technologies-FinFET like double gate MOSFETs (DGFETs) and Schottky-barrier (SB) devices. Though SB devices are expected to have lower ON current, their lower source/drain resistance (RS/D) can be important in scaled technologies. We evaluate the suitability of the optimized devices for logic and memory designs in the sub-10-nm technologies using a comparative device-circuit analysis based on nonequilibrium Green's function-based transport models and HSPICE circuit simulation. The devices are optimized with gate-to-source (S)/drain (D) underlap, and proper body thickness to suppress direct source-to-drain tunneling (DSDT). Our analysis shows that introduction of gate-to-S/D underlap provides the benefit of reducing DSDT, while reduced body thickness provides a tradeoff between low DSDT and high RS/D. Results also show that DGFETs provide higher drive strength even with larger RS/D. As a result, DGFET-based logic shows higher performance, and better read stability for memory while SBFET-based memory shows higher write stability.",
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    Device-circuit analysis of double-gate MOSFETs and schottky-barrier FETs : A comparison study for sub-10-nm technologies. / Cho, Woo Suhl; Gupta, Sumeet Kumar; Roy, Kaushik.

    In: IEEE Transactions on Electron Devices, Vol. 61, No. 12, 6957548, 01.12.2014, p. 4025-4031.

    Research output: Contribution to journalArticle

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