Abstract
This paper presents ultra low-power reconfigurable logic and single-electron memory architecture to enable sub-300 mV V CC operation using classical and non-classical (NC) III-V Multi-Gate Quantum Well Field Effect Transistors (MuQFETs). A strained In 0.7Ga 0.3As quantum-well based classical multi-gate FET and an In 0.7Ga 0.3As MuQFET operating in Coulomb-blockade mode with tunable tunnel barrier are experimentally demonstrated. Reconfigurable Binary Decision Diagram (BDD) logic and single-electron SRAM implementations based on III-V MuQFETs are demonstrated. Using device models well calibrated to experiments, we show 50% reduction in minimum-energy for logic, and 75x reduction in dynamic power for memory at equivalent performance over Si CMOS logic.
Original language | English (US) |
---|---|
Title of host publication | 2011 International Electron Devices Meeting, IEDM 2011 |
DOIs | |
State | Published - Dec 1 2011 |
Event | 2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011 |
Other
Other | 2011 IEEE International Electron Devices Meeting, IEDM 2011 |
---|---|
Country/Territory | United States |
City | Washington, DC |
Period | 12/5/11 → 12/7/11 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry