Device circuit co-design using classical and non-classical III-V multi-gate quantum-well FETs (MuQFETs)

Lu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents ultra low-power reconfigurable logic and single-electron memory architecture to enable sub-300 mV V CC operation using classical and non-classical (NC) III-V Multi-Gate Quantum Well Field Effect Transistors (MuQFETs). A strained In 0.7Ga 0.3As quantum-well based classical multi-gate FET and an In 0.7Ga 0.3As MuQFET operating in Coulomb-blockade mode with tunable tunnel barrier are experimentally demonstrated. Reconfigurable Binary Decision Diagram (BDD) logic and single-electron SRAM implementations based on III-V MuQFETs are demonstrated. Using device models well calibrated to experiments, we show 50% reduction in minimum-energy for logic, and 75x reduction in dynamic power for memory at equivalent performance over Si CMOS logic.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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