Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

Vyshnavi Suntharalingam, Stephen J. Fonash, Osama O. Awadelkarim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.

Original languageEnglish (US)
Title of host publicationProceedings of the International Workshop on Active Matrix Liquid Crystal Displays, AMLCDs
Pages115-117
Number of pages3
StatePublished - 1995
EventProceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs - Bethlehem, PA, USA
Duration: Sep 25 1995Sep 26 1995

Other

OtherProceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs
CityBethlehem, PA, USA
Period9/25/959/26/95

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Suntharalingam, V., Fonash, S. J., & Awadelkarim, O. O. (1995). Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations. In Proceedings of the International Workshop on Active Matrix Liquid Crystal Displays, AMLCDs (pp. 115-117)