Device-level thermal management of gallium oxide field-effect transistors

Bikramjit Chatterjee, Ke Zeng, Christopher D. Nordquist, Uttam Singisetti, Sukwon Choi

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


The ultrawide bandgap (UWBG) (4.8 eV) and melt-grown substrate availability of β-Ga2O3 give promise to the development of next-generation power electronic devices with dramatically improved size, weight, power, and efficiency over current state-of-the-art WBG devices based on 4H-SiC and GaN. Also, with recent advancements made in gigahertz frequency radio frequency (RF) applications, the potential for monolithic or heterogenous integration of RF and power switches has attracted researchers' attention. However, it is expected that Ga2O3 devices will suffer from self-heating due to the poor thermal conductivity of the material. Thermoreflectance thermal imaging and infrared thermography were used to understand the thermal characteristics of a MOSFET fabricated via homoepitaxy. A 3-D coupled electrothermal model was constructed based on the electrical and thermal characterization results. The device model shows that a homoepitaxial device suffers from an unacceptable junction temperature rise of 1500 °C under a targeted power density of 10 W/mm, indicating the importance of employing device-level thermal managements to individual Ga2O3 transistors. The effectiveness of various active and passive cooling solutions was tested to achieve a goal of reducing the device operating temperature below 200 °C at a power density of 10 W/mm. Results show that flip-chip heterointegration is a viable option to enhance both the steady-state and transient thermal characteristics of Ga2O3 devices without sacrificing the intrinsic advantage of high-quality native substrates. Also, it is not an active thermal management solution that entails peripherals requiring additional size and cost implications.

Original languageEnglish (US)
Article number8737738
Pages (from-to)2352-2365
Number of pages14
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Issue number12
StatePublished - Dec 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Device-level thermal management of gallium oxide field-effect transistors'. Together they form a unique fingerprint.

Cite this