Device/circuit interactions at 22nm technology node

Kaushik Roy, Jaydeep P. Kulkarni, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

As transition is being made into 22nm node, technology considerations and device architectures suitable for such scaled technologies are being explored. To design circuits and systems at scaled nodes, we believe there is a need for technology aware circuit and system design methodology that considers device architecture, and technology challenges to achieve design optimality. In this paper, we discuss the challenges of device-circuit-system design at the 22 nm node and present techniques at different levels of design abstraction to meet these challenges. In particular, we discuss different device options for multi-gate FETs. Logic and memory design using multi-gate FETs is also considered. Finally, we briefly discuss process variation tolerant system design methodologies for such scaled technologies.

Original languageEnglish (US)
Title of host publication2009 46th ACM/IEEE Design Automation Conference, DAC 2009
Pages97-102
Number of pages6
StatePublished - Nov 10 2009
Event2009 46th ACM/IEEE Design Automation Conference, DAC 2009 - San Francisco, CA, United States
Duration: Jul 26 2009Jul 31 2009

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X

Other

Other2009 46th ACM/IEEE Design Automation Conference, DAC 2009
CountryUnited States
CitySan Francisco, CA
Period7/26/097/31/09

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All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modeling and Simulation

Cite this

Roy, K., Kulkarni, J. P., & Gupta, S. K. (2009). Device/circuit interactions at 22nm technology node. In 2009 46th ACM/IEEE Design Automation Conference, DAC 2009 (pp. 97-102). [5227190] (Proceedings - Design Automation Conference).