DG02-Wide-bandgap materials for future applications

Fernando Guarin; Alexander Grill; Mark Anders; Zakarie Chbili; Patrick Lenahan

doi:10.1109/IIRW49815.2020.9312867

DG02-Wide-bandgap materials for future applications

Fernando Guarin, Alexander Grill, Mark Anders, Zakarie Chbili, Patrick Lenahan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High Breakdown E field, high thermal conductivity, high carrier saturation velocity.

Original language	English (US)
Title of host publication	2020 IEEE International Integrated Reliability Workshop, IIRW 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728170589
DOIs	https://doi.org/10.1109/IIRW49815.2020.9312867
State	Published - Oct 2020
Event	2020 IEEE International Integrated Reliability Workshop, IIRW 2020 - Virtual, South Lake Tahoe, United States Duration: Oct 4 2020 → Nov 1 2020

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2020-October

Conference

Conference	2020 IEEE International Integrated Reliability Workshop, IIRW 2020
Country/Territory	United States
City	Virtual, South Lake Tahoe
Period	10/4/20 → 11/1/20

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

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10.1109/IIRW49815.2020.9312867

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Guarin, F., Grill, A., Anders, M., Chbili, Z., & Lenahan, P. (2020). DG02-Wide-bandgap materials for future applications. In 2020 IEEE International Integrated Reliability Workshop, IIRW 2020 [9312867] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2020-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW49815.2020.9312867

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title = "DG02-Wide-bandgap materials for future applications",

abstract = "High Breakdown E field, high thermal conductivity, high carrier saturation velocity.",

author = "Fernando Guarin and Alexander Grill and Mark Anders and Zakarie Chbili and Patrick Lenahan",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Integrated Reliability Workshop, IIRW 2020 ; Conference date: 04-10-2020 Through 01-11-2020",

year = "2020",

month = oct,

doi = "10.1109/IIRW49815.2020.9312867",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE International Integrated Reliability Workshop, IIRW 2020",

address = "United States",

}

Guarin, F, Grill, A, Anders, M, Chbili, Z & Lenahan, P 2020, DG02-Wide-bandgap materials for future applications. in 2020 IEEE International Integrated Reliability Workshop, IIRW 2020., 9312867, IEEE International Integrated Reliability Workshop Final Report, vol. 2020-October, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Integrated Reliability Workshop, IIRW 2020, Virtual, South Lake Tahoe, United States, 10/4/20. https://doi.org/10.1109/IIRW49815.2020.9312867

DG02-Wide-bandgap materials for future applications. / Guarin, Fernando; Grill, Alexander; Anders, Mark et al.
2020 IEEE International Integrated Reliability Workshop, IIRW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9312867 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2020-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - DG02-Wide-bandgap materials for future applications

AU - Guarin, Fernando

AU - Grill, Alexander

AU - Anders, Mark

AU - Chbili, Zakarie

AU - Lenahan, Patrick

PY - 2020/10

Y1 - 2020/10

N2 - High Breakdown E field, high thermal conductivity, high carrier saturation velocity.

AB - High Breakdown E field, high thermal conductivity, high carrier saturation velocity.

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DO - 10.1109/IIRW49815.2020.9312867

M3 - Conference contribution

AN - SCOPUS:85099740142

T3 - IEEE International Integrated Reliability Workshop Final Report

BT - 2020 IEEE International Integrated Reliability Workshop, IIRW 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE International Integrated Reliability Workshop, IIRW 2020

Y2 - 4 October 2020 through 1 November 2020

ER -

DG02-Wide-bandgap materials for future applications

Abstract

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All Science Journal Classification (ASJC) codes

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