Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires

Xi Zhang, Kok Keong Lew, Pramod Nimmatoori, Joan Marie Redwing, Elizabeth C. Dickey

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

Original languageEnglish (US)
Pages (from-to)3241-3245
Number of pages5
JournalNano letters
Volume7
Issue number10
DOIs
StatePublished - Oct 1 2007

Fingerprint

Nanowires
nanowires
Vapors
vapors
Liquids
liquids
Chemical analysis
thermoelectricity
Transmission electron microscopy
transmission electron microscopy
spectroscopy
x rays
energy

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Zhang, Xi ; Lew, Kok Keong ; Nimmatoori, Pramod ; Redwing, Joan Marie ; Dickey, Elizabeth C. / Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires. In: Nano letters. 2007 ; Vol. 7, No. 10. pp. 3241-3245.
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Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires. / Zhang, Xi; Lew, Kok Keong; Nimmatoori, Pramod; Redwing, Joan Marie; Dickey, Elizabeth C.

In: Nano letters, Vol. 7, No. 10, 01.10.2007, p. 3241-3245.

Research output: Contribution to journalArticle

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