Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires

Xi Zhang, Kok Keong Lew, Pramod Nimmatoori, Joan Marie Redwing, Elizabeth C. Dickey

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

Original languageEnglish (US)
Pages (from-to)3241-3245
Number of pages5
JournalNano letters
Volume7
Issue number10
DOIs
StatePublished - Oct 1 2007

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Diameter-dependent composition of vapor-liquid-solid grown S <sub>i-x</sub>Ge <sub>x</sub> nanowires'. Together they form a unique fingerprint.

Cite this