Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si 1-xGe x heterostructure nanowires

Trevor E. Clark, Pramod Nimmatoori, Kok Keong Lew, Ling Pan, Joan M. Redwing, Elizabeth C. Dickey

Research output: Contribution to journalArticle

136 Citations (Scopus)

Abstract

A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1-xGe x axial heterostructure nanowires grown via Au-mediated low pressure CVO using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

Original languageEnglish (US)
Pages (from-to)1246-1252
Number of pages7
JournalNano letters
Volume8
Issue number4
DOIs
StatePublished - Apr 1 2008

Fingerprint

Nanowires
Heterojunctions
nanowires
Vapors
vapors
Liquids
liquids
Silanes
silanes
low pressure
Fabrication
Thin films
fabrication
thin films

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Clark, Trevor E. ; Nimmatoori, Pramod ; Lew, Kok Keong ; Pan, Ling ; Redwing, Joan M. ; Dickey, Elizabeth C. / Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si 1-xGe x heterostructure nanowires. In: Nano letters. 2008 ; Vol. 8, No. 4. pp. 1246-1252.
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Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si 1-xGe x heterostructure nanowires. / Clark, Trevor E.; Nimmatoori, Pramod; Lew, Kok Keong; Pan, Ling; Redwing, Joan M.; Dickey, Elizabeth C.

In: Nano letters, Vol. 8, No. 4, 01.04.2008, p. 1246-1252.

Research output: Contribution to journalArticle

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AU - Redwing, Joan M.

AU - Dickey, Elizabeth C.

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