Dielectric and electromechanical properties of textured niobium-doped bismuth titanate ceramics

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150 Citations (Scopus)

Abstract

Textured Nb-doped bismuth titanate ceramics (Bi4Ti3-x/5-Nbx/5O12, where x = 0.02) were fabricated by templated grain growth. It was found that the use of a fine precursor powder led to enhanced densification of the ceramic, while Nb doping reduced electrical conduction and dielectric loss, which enabled poling at high temperatures and high electric fields. Sintered tapes showed anisotropic dielectric and piezoelectric properties when measured parallel and perpendicular to the casting plane (e.g., the remanent polarization differed by more than a factor of 15 in the two directions). The piezoelectric constant parallel to the casting plane of the tape was approx. 30 pC/N, or approx. 77% of the single-crystal value. Thermal depoling studies demonstrated that high-temperature piezoelectric applications are possible up to approx. 450°C in textured, doped bismuth titanate.

Original languageEnglish (US)
Pages (from-to)113-118
Number of pages6
JournalJournal of the American Ceramic Society
Volume83
Issue number1
DOIs
StatePublished - Jan 1 2000

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Niobium
titanate
niobium
bismuth
Bismuth
ceramics
Tapes
Casting
Remanence
Dielectric losses
Grain growth
Densification
Powders
electric field
polarization
Electric fields
Doping (additives)
Single crystals
crystal
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

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title = "Dielectric and electromechanical properties of textured niobium-doped bismuth titanate ceramics",
abstract = "Textured Nb-doped bismuth titanate ceramics (Bi4Ti3-x/5-Nbx/5O12, where x = 0.02) were fabricated by templated grain growth. It was found that the use of a fine precursor powder led to enhanced densification of the ceramic, while Nb doping reduced electrical conduction and dielectric loss, which enabled poling at high temperatures and high electric fields. Sintered tapes showed anisotropic dielectric and piezoelectric properties when measured parallel and perpendicular to the casting plane (e.g., the remanent polarization differed by more than a factor of 15 in the two directions). The piezoelectric constant parallel to the casting plane of the tape was approx. 30 pC/N, or approx. 77{\%} of the single-crystal value. Thermal depoling studies demonstrated that high-temperature piezoelectric applications are possible up to approx. 450°C in textured, doped bismuth titanate.",
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AU - Hong, Seong Hyeon

AU - Trolier-McKinstry, Susan E.

AU - Messing, Gary Lynn

PY - 2000/1/1

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N2 - Textured Nb-doped bismuth titanate ceramics (Bi4Ti3-x/5-Nbx/5O12, where x = 0.02) were fabricated by templated grain growth. It was found that the use of a fine precursor powder led to enhanced densification of the ceramic, while Nb doping reduced electrical conduction and dielectric loss, which enabled poling at high temperatures and high electric fields. Sintered tapes showed anisotropic dielectric and piezoelectric properties when measured parallel and perpendicular to the casting plane (e.g., the remanent polarization differed by more than a factor of 15 in the two directions). The piezoelectric constant parallel to the casting plane of the tape was approx. 30 pC/N, or approx. 77% of the single-crystal value. Thermal depoling studies demonstrated that high-temperature piezoelectric applications are possible up to approx. 450°C in textured, doped bismuth titanate.

AB - Textured Nb-doped bismuth titanate ceramics (Bi4Ti3-x/5-Nbx/5O12, where x = 0.02) were fabricated by templated grain growth. It was found that the use of a fine precursor powder led to enhanced densification of the ceramic, while Nb doping reduced electrical conduction and dielectric loss, which enabled poling at high temperatures and high electric fields. Sintered tapes showed anisotropic dielectric and piezoelectric properties when measured parallel and perpendicular to the casting plane (e.g., the remanent polarization differed by more than a factor of 15 in the two directions). The piezoelectric constant parallel to the casting plane of the tape was approx. 30 pC/N, or approx. 77% of the single-crystal value. Thermal depoling studies demonstrated that high-temperature piezoelectric applications are possible up to approx. 450°C in textured, doped bismuth titanate.

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