Dielectric and ferroelectric properties of Ta-doped bismuth titanate

S. H. Hong, J. A. Horn, S. Trolier-McKinstry, G. L. Messing

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

Original languageEnglish (US)
Pages (from-to)1661-1664
Number of pages4
JournalJournal of Materials Science Letters
Volume19
Issue number18
DOIs
StatePublished - Sep 2000

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Bismuth
Ferroelectric materials
Doping (additives)
Microstructure
Dielectric losses
bismuth titanate

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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Dielectric and ferroelectric properties of Ta-doped bismuth titanate. / Hong, S. H.; Horn, J. A.; Trolier-McKinstry, S.; Messing, G. L.

In: Journal of Materials Science Letters, Vol. 19, No. 18, 09.2000, p. 1661-1664.

Research output: Contribution to journalArticle

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