Dielectric and ferroelectric properties of Ta-doped bismuth titanate

S. H. Hong, J. A. Horn, S. Trolier-McKinstry, G. L. Messing

Research output: Contribution to journalArticlepeer-review

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The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

Original languageEnglish (US)
Pages (from-to)1661-1664
Number of pages4
JournalJournal of Materials Science Letters
Issue number18
StatePublished - Sep 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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