Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

J. F. Ihlefeld, Jon-Paul Maria, W. Borland

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Barium titanate zirconate, Ba(Ti1-x Zrx)O3(0 ≤ × ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1-x Zrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax and all compositions showed an increase in permittivity.

Original languageEnglish (US)
Pages (from-to)2838-2844
Number of pages7
JournalJournal of Materials Research
Volume20
Issue number10
DOIs
StatePublished - Oct 1 2005

Fingerprint

Barium titanate
barium
dielectric properties
Copper
Permittivity
permittivity
Thin films
copper
Substrates
thin films
Chemical analysis
Ferroelectric materials
grain size
Steam
room temperature
Crystallization
Zirconium
Temperature measurement
Temperature
Water vapor

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Barium titanate zirconate, Ba(Ti1-x Zrx)O3(0 ≤ × ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol{\%} BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1-x Zrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax and all compositions showed an increase in permittivity.",
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Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates. / Ihlefeld, J. F.; Maria, Jon-Paul; Borland, W.

In: Journal of Materials Research, Vol. 20, No. 10, 01.10.2005, p. 2838-2844.

Research output: Contribution to journalArticle

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