Dielectric anomalies in [111] oriented 0.955Pb(Zn 1/3Nb 2/3)O 3-0.045PbTiO 3 single crystals under different electrical and thermal conditions

Mingrong Shen, Wenwu Cao

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12 Scopus citations

Abstract

The dielectric anomalies in [111] oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.

Original languageEnglish (US)
Pages (from-to)8124-8129
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
StatePublished - Jun 15 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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