Dielectric anomalies in [111] oriented 0.955Pb(Zn 1/3Nb 2/3)O 3-0.045PbTiO 3 single crystals under different electrical and thermal conditions

Mingrong Shen, Wenwu Cao

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The dielectric anomalies in [111] oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.

Original languageEnglish (US)
Pages (from-to)8124-8129
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
StatePublished - Jun 15 2004

Fingerprint

anomalies
single crystals
temperature distribution
direct current
diagrams
temperature
electric fields
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{3984c8ceff7047b1bd092dea5d80521f,
title = "Dielectric anomalies in [111] oriented 0.955Pb(Zn 1/3Nb 2/3)O 3-0.045PbTiO 3 single crystals under different electrical and thermal conditions",
abstract = "The dielectric anomalies in [111] oriented PZN-4.5{\%}PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.",
author = "Mingrong Shen and Wenwu Cao",
year = "2004",
month = "6",
day = "15",
doi = "10.1063/1.1728315",
language = "English (US)",
volume = "95",
pages = "8124--8129",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Dielectric anomalies in [111] oriented 0.955Pb(Zn 1/3Nb 2/3)O 3-0.045PbTiO 3 single crystals under different electrical and thermal conditions

AU - Shen, Mingrong

AU - Cao, Wenwu

PY - 2004/6/15

Y1 - 2004/6/15

N2 - The dielectric anomalies in [111] oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.

AB - The dielectric anomalies in [111] oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.

UR - http://www.scopus.com/inward/record.url?scp=3142529197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142529197&partnerID=8YFLogxK

U2 - 10.1063/1.1728315

DO - 10.1063/1.1728315

M3 - Article

VL - 95

SP - 8124

EP - 8129

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -