Dielectric behavior in the BiScO3-BaTiO3-(K 1/2B1/22)TiO3 ternary system

J. B. Lim, Shujun Zhang, N. C. Kim, Thomas R. Shrout

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

(1-x)[0.4BiScO3-0.6BaTiO3] + x (K 1/2Bi1/2)TiO3 [BSBT-KBTx] ceramics in the perovskite solid solution system were studied for potential high temperature capacitor applications. The diectric properties of BSBT-KBTx ceramics were investigated as a function temperature and frequency. The BSBT-KBTx ceramics showed high dielectric permittivity (> 1000 @RT) and low dielectric loss over the temperature range from 100 ∼ 300°C with a flat temperature coefficient (TCC). In addition, BSBT-KBTx ceramics were observed to possess a dielectric relaxation at temperatures (> 300 K). Polarization measurements as a function of electric field showed high energy storage densities with 1.8 J/cm3 at 120 kV/cm. Therefore, dielectrics in this novel ternary system appear to be promising candidates for high temperature and energy storage capacitors.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs
StatePublished - Dec 1 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics
Volume1

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lim, J. B., Zhang, S., Kim, N. C., & Shrout, T. R. (2008). Dielectric behavior in the BiScO3-BaTiO3-(K 1/2B1/22)TiO3 ternary system. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 [4693888] (IEEE International Symposium on Applications of Ferroelectrics; Vol. 1). https://doi.org/10.1109/ISAF.2008.4693888