We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics