Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

Jungho Ryu, Chee Sung Park, Jong Jin Choi, Byung Dong Hahn, Woon Ha Yoon, Byoung Kuk Lee, Dong Soo Park, Shashank Priya, Kun Young Kim, Chan Park

Research output: Contribution to journalArticle

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Abstract

We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.

Original languageEnglish (US)
Pages (from-to)665-672
Number of pages8
JournalPhilosophical Magazine Letters
Volume89
Issue number11
DOIs
Publication statusPublished - Nov 1 2009

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ryu, J., Park, C. S., Choi, J. J., Hahn, B. D., Yoon, W. H., Lee, B. K., ... Park, C. (2009). Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films. Philosophical Magazine Letters, 89(11), 665-672. https://doi.org/10.1080/09500830903236012