Dielectric enhancement in polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films on Pt/Ti/SiO2/Si substrates

Shuibing Ge, Mingrong Shen, Zhaoyuan Ning, Wenwu Cao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films were deposited layer by layer onto Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. The dielectric constant of the films was enhanced more than four times with decreasing the periodicity down to 60 nm, while the dielectric loss was kept at the low level compared with that of the solid solution Ba0.8Sr0.2TiO3 thin films. A large dielectric constant 1336 at 10 kHz was observed at room temperature with a stacking periodicity of 60 nm and the dielectric loss is smaller than 0.05. The results show high application potential of such multilayered thin films for high-density DRAM capacitors.

Original languageEnglish (US)
Pages (from-to)2105-2107
Number of pages3
JournalJournal of Materials Science Letters
Volume20
Issue number23
DOIs
StatePublished - Dec 1 2001

Fingerprint

Dielectric losses
Thin films
Permittivity
Substrates
Dynamic random access storage
Pulsed laser deposition
Solid solutions
Capacitors
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{0d13b161ac7c4548974106207bb8a845,
title = "Dielectric enhancement in polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films on Pt/Ti/SiO2/Si substrates",
abstract = "Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films were deposited layer by layer onto Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. The dielectric constant of the films was enhanced more than four times with decreasing the periodicity down to 60 nm, while the dielectric loss was kept at the low level compared with that of the solid solution Ba0.8Sr0.2TiO3 thin films. A large dielectric constant 1336 at 10 kHz was observed at room temperature with a stacking periodicity of 60 nm and the dielectric loss is smaller than 0.05. The results show high application potential of such multilayered thin films for high-density DRAM capacitors.",
author = "Shuibing Ge and Mingrong Shen and Zhaoyuan Ning and Wenwu Cao",
year = "2001",
month = "12",
day = "1",
doi = "10.1023/A:1013712011781",
language = "English (US)",
volume = "20",
pages = "2105--2107",
journal = "Journal of Materials Science Letters",
issn = "0261-8028",
publisher = "Chapman & Hall",
number = "23",

}

Dielectric enhancement in polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films on Pt/Ti/SiO2/Si substrates. / Ge, Shuibing; Shen, Mingrong; Ning, Zhaoyuan; Cao, Wenwu.

In: Journal of Materials Science Letters, Vol. 20, No. 23, 01.12.2001, p. 2105-2107.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dielectric enhancement in polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films on Pt/Ti/SiO2/Si substrates

AU - Ge, Shuibing

AU - Shen, Mingrong

AU - Ning, Zhaoyuan

AU - Cao, Wenwu

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films were deposited layer by layer onto Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. The dielectric constant of the films was enhanced more than four times with decreasing the periodicity down to 60 nm, while the dielectric loss was kept at the low level compared with that of the solid solution Ba0.8Sr0.2TiO3 thin films. A large dielectric constant 1336 at 10 kHz was observed at room temperature with a stacking periodicity of 60 nm and the dielectric loss is smaller than 0.05. The results show high application potential of such multilayered thin films for high-density DRAM capacitors.

AB - Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films were deposited layer by layer onto Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. The dielectric constant of the films was enhanced more than four times with decreasing the periodicity down to 60 nm, while the dielectric loss was kept at the low level compared with that of the solid solution Ba0.8Sr0.2TiO3 thin films. A large dielectric constant 1336 at 10 kHz was observed at room temperature with a stacking periodicity of 60 nm and the dielectric loss is smaller than 0.05. The results show high application potential of such multilayered thin films for high-density DRAM capacitors.

UR - http://www.scopus.com/inward/record.url?scp=0035709918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035709918&partnerID=8YFLogxK

U2 - 10.1023/A:1013712011781

DO - 10.1023/A:1013712011781

M3 - Article

AN - SCOPUS:0035709918

VL - 20

SP - 2105

EP - 2107

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

SN - 0261-8028

IS - 23

ER -