The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3-PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455°C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e 31,f was -12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e 31,f ∼ -12 C/m2) while the transition temperature is 100°C higher.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering