Dielectric functions and optical bandgaps of high- K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Seung Gu Lim, Stas Kriventsov, Thomas N. Jackson, J. H. Haeni, D. G. Schlom, A. M. Balbashov, R. Uecker, P. Reiche, J. L. Freeouf, G. Lucovsky

Research output: Contribution to journalArticle

308 Scopus citations

Abstract

A far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high-K-dielectric materials. These materials have been gaining greater attention as possible substitutes for SiO 2 as gate dielectrics in aggressively scaled silicon devices. The optical properties of four representative high-K bulk crystalline dielectrics, LaAlO 3, Y 2O 3-stabilized HfO 2 (Y 2O 3) 0.15-(HfO 2) 0.85, GdScO 3, and SmScO 3, were investigated with far UV spectroscopic ellipsometry and visible-near UV optical transmission measurements. Optical dielectric functions and optical band gap energies for these materials are obtained from these studies. The spectroscopic data have been interpreted in terms of a universal electronic structure energy scheme developed form ab initio quantum chemical calculations. The spectroscopic data and results provide information that is needed to select viable alternative dielectric candidate materials with adequate band gaps, and conduction and valence band offset energies for this application, and additionally to provide an optical metrology for gate dielectric films on silicon substrates.

Original languageEnglish (US)
Pages (from-to)4500-4505
Number of pages6
JournalJournal of Applied Physics
Volume91
Issue number7
DOIs
Publication statusPublished - Apr 1 2002

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this