Dielectric properties of an ultra-low-temperature cofiring Bi 2 Mo 2 O 9 multilayer

Di Zhou, Clive A. Randall, Amanda Baker, Hong Wang, Li Xia Pang, Xi Yao

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A Bi 2 Mo 2 O 9 multilayer ceramic capacitor structure was fabricated in a thick-film process involving tape casting and screen-printing forming techniques. A novel base metal, Al, was used as the internal electrode, and these dielectrics were co-sintered at 645°C in air. Scanning electron microscopy and energy dispersive spectroscopy (EDS) were used to investigate the local chemical compatibility between the electrode layer and ceramic layer, and no reaction or interdiffusion was found. Dielectric properties of electroded monolithic ceramic, multilayer, and monolayer samples at 100 Hz-10 MHz in a temperature range of -55°-+175°C were measured; values of the dielectric properties were similar to bulk measurements consistent with the absence of any interfacial reaction. Collectively, the data show that it is possible to use the low-temperature firing Bi 2 Mo 2 O 9 ceramic and Al internal electrode for an ultra-low-temperature cofired ceramic technology.

Original languageEnglish (US)
Pages (from-to)1443-1446
Number of pages4
JournalJournal of the American Ceramic Society
Volume93
Issue number5
DOIs
StatePublished - May 1 2010

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Dielectric properties
Multilayers
Electrodes
Ceramic capacitors
Screen printing
Surface chemistry
Thick films
Temperature
Tapes
Energy dispersive spectroscopy
Monolayers
Casting
Metals
Scanning electron microscopy
Air

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Zhou, Di ; Randall, Clive A. ; Baker, Amanda ; Wang, Hong ; Pang, Li Xia ; Yao, Xi. / Dielectric properties of an ultra-low-temperature cofiring Bi 2 Mo 2 O 9 multilayer In: Journal of the American Ceramic Society. 2010 ; Vol. 93, No. 5. pp. 1443-1446.
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abstract = "A Bi 2 Mo 2 O 9 multilayer ceramic capacitor structure was fabricated in a thick-film process involving tape casting and screen-printing forming techniques. A novel base metal, Al, was used as the internal electrode, and these dielectrics were co-sintered at 645°C in air. Scanning electron microscopy and energy dispersive spectroscopy (EDS) were used to investigate the local chemical compatibility between the electrode layer and ceramic layer, and no reaction or interdiffusion was found. Dielectric properties of electroded monolithic ceramic, multilayer, and monolayer samples at 100 Hz-10 MHz in a temperature range of -55°-+175°C were measured; values of the dielectric properties were similar to bulk measurements consistent with the absence of any interfacial reaction. Collectively, the data show that it is possible to use the low-temperature firing Bi 2 Mo 2 O 9 ceramic and Al internal electrode for an ultra-low-temperature cofired ceramic technology.",
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Dielectric properties of an ultra-low-temperature cofiring Bi 2 Mo 2 O 9 multilayer . / Zhou, Di; Randall, Clive A.; Baker, Amanda; Wang, Hong; Pang, Li Xia; Yao, Xi.

In: Journal of the American Ceramic Society, Vol. 93, No. 5, 01.05.2010, p. 1443-1446.

Research output: Contribution to journalArticle

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