Dielectric properties of ferroelectric thin films with surface transition layers

Hui Chen, Tianquan Lü, Lian Cui, Wenwu Cao

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean-field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to the previous treatment of surface layers using uniform surface exchange interactions and a transverse field. The effects of physical parameters on the dielectric properties are quantified. The results obtained indicate that STL has a very strong influence on the dielectric properties of ferroelectric thin films. Some of our theoretical results are in accordance with the available experimental data.

Original languageEnglish (US)
Pages (from-to)1963-1971
Number of pages9
JournalPhysica A: Statistical Mechanics and its Applications
Volume387
Issue number8-9
DOIs
StatePublished - Mar 15 2008

All Science Journal Classification (ASJC) codes

  • Statistics and Probability
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Dielectric properties of ferroelectric thin films with surface transition layers'. Together they form a unique fingerprint.

Cite this