By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean-field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to the previous treatment of surface layers using uniform surface exchange interactions and a transverse field. The effects of physical parameters on the dielectric properties are quantified. The results obtained indicate that STL has a very strong influence on the dielectric properties of ferroelectric thin films. Some of our theoretical results are in accordance with the available experimental data.
|Original language||English (US)|
|Number of pages||9|
|Journal||Physica A: Statistical Mechanics and its Applications|
|State||Published - Mar 15 2008|
All Science Journal Classification (ASJC) codes
- Statistics and Probability
- Condensed Matter Physics