Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering

S. Kalpat, X. Du, I. R. Abothu, A. Akiba, H. Goto, Susan E. Trolier-McKinstry, Kenji Uchino

Research output: Contribution to journalConference article

2 Scopus citations


Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

Original languageEnglish (US)
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 11 2000
EventMaterials for Smart Systems III - Boston, MA, USA
Duration: Nov 30 1999Dec 2 1999


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this