Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering

S. Kalpat, X. Du, I. R. Abothu, A. Akiba, H. Goto, Susan E. Trolier-McKinstry, Kenji Uchino

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

Original languageEnglish (US)
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume604
StatePublished - Dec 11 2000

Fingerprint

Reactive sputtering
Zirconium
Dielectric properties
dielectric properties
Lead
sputtering
Thin films
thin films
Permittivity
permittivity
Rapid thermal annealing
Dielectric losses
Hysteresis loops
dielectric loss
Ferroelectric materials
analyzers
hysteresis
Electric fields
Polarization
cycles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering",
abstract = "Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.",
author = "S. Kalpat and X. Du and Abothu, {I. R.} and A. Akiba and H. Goto and Trolier-McKinstry, {Susan E.} and Kenji Uchino",
year = "2000",
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day = "11",
language = "English (US)",
volume = "604",
pages = "3--8",
journal = "Materials Research Society Symposium - Proceedings",
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publisher = "Materials Research Society",

}

Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering. / Kalpat, S.; Du, X.; Abothu, I. R.; Akiba, A.; Goto, H.; Trolier-McKinstry, Susan E.; Uchino, Kenji.

In: Materials Research Society Symposium - Proceedings, Vol. 604, 11.12.2000, p. 3-8.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Dielectric properties of highly oriented lead zirconium titanate thin films prepared by reactive rf-sputtering

AU - Kalpat, S.

AU - Du, X.

AU - Abothu, I. R.

AU - Akiba, A.

AU - Goto, H.

AU - Trolier-McKinstry, Susan E.

AU - Uchino, Kenji

PY - 2000/12/11

Y1 - 2000/12/11

N2 - Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

AB - Highly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

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M3 - Conference article

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