Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO ceramics were investigated. The ceramics were investigated using electrically active grain boundaries at low temperatures of 10-70K. A expression for the admittance of an electrically active grain boundary at low temperatures was obtained from theoretical analysis. It was concluded that the relaxation of the shallow donors was Debye type with a thermally activated relaxation time and was related to the ionization process of the donors.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)