Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO

Jiaping Han, A. M.R. Senos, P. Q. Mantas, Wenwu Cao

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO ceramics were investigated. The ceramics were investigated using electrically active grain boundaries at low temperatures of 10-70K. A expression for the admittance of an electrically active grain boundary at low temperatures was obtained from theoretical analysis. It was concluded that the relaxation of the shallow donors was Debye type with a thermally activated relaxation time and was related to the ionization process of the donors.

Original languageEnglish (US)
Pages (from-to)4097-4103
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003

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grain boundaries
ceramics
electrical impedance
relaxation time
ionization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Han, Jiaping ; Senos, A. M.R. ; Mantas, P. Q. ; Cao, Wenwu. / Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 7. pp. 4097-4103.
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Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO. / Han, Jiaping; Senos, A. M.R.; Mantas, P. Q.; Cao, Wenwu.

In: Journal of Applied Physics, Vol. 93, No. 7, 01.04.2003, p. 4097-4103.

Research output: Contribution to journalArticle

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