Diode current detection of extended x-ray absorption fine structure in gallium arsenide

R. F. Boehme, G. S. Cargill, W. Weber, Thomas Nelson Jackson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.

Original languageEnglish (US)
Pages (from-to)811-815
Number of pages5
JournalJournal of Applied Physics
Volume58
Issue number2
DOIs
StatePublished - Dec 1 1985

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x ray absorption
gallium
fine structure
diodes
junction diodes
diffusion length
minority carriers
Schottky diodes
photocurrents
depletion
aluminum
fluorescence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Diode current detection of extended x-ray absorption fine structure in gallium arsenide. / Boehme, R. F.; Cargill, G. S.; Weber, W.; Jackson, Thomas Nelson.

In: Journal of Applied Physics, Vol. 58, No. 2, 01.12.1985, p. 811-815.

Research output: Contribution to journalArticle

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