Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

Mingda Li, Qichen Song, Weiwei Zhao, Joseph A. Garlow, Te Huan Liu, Lijun Wu, Yimei Zhu, Jagadeesh S. Moodera, Moses Hung-Wai Chan, Gang Chen, Cui Zu Chang

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Abstract

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. Here we report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi0.2Sb0.8)2Te3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screening is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.

Original languageEnglish (US)
Article number201301
JournalPhysical Review B
Volume96
Issue number20
DOIs
StatePublished - Nov 1 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Li, M., Song, Q., Zhao, W., Garlow, J. A., Liu, T. H., Wu, L., Zhu, Y., Moodera, J. S., Chan, M. H-W., Chen, G., & Chang, C. Z. (2017). Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures. Physical Review B, 96(20), [201301]. https://doi.org/10.1103/PhysRevB.96.201301