Direct evaluation of domain-wall and intrinsic contributions to the dielectric and piezoelectric response and their temperature dependence on lead zirconate-titanate ceramics

Qiming Zhang, H. Wang, N. Kim, L. E. Cross

    Research output: Contribution to journalReview article

    485 Citations (Scopus)

    Abstract

    By making use of the fact that domain-wall motions do not produce volumetric changes, an experimental method is introduced to directly and quantitatively determine the domain-wall and intrinsic contributions to the piezoelectric and dielectric responses of a ferroelectric material. Utilizing this method, the contributions from the domain walls and intrinsic part as well as their temperature dependence for lead zirconate-titanate (PZT) 52/48 and PZT-500 ceramics are evaluated. The data show that at temperatures below 300 K, the large change in the dielectric and piezoelectric constants with temperature is due to the change in the domain-wall activities in the materials. The results confirm that most of the dielectric and piezoelectric responses at room temperature for the materials studied is from the domain-wall contributions. The data also indicate that in PZT-500, both 180°wall and non-180°walls are possibly active under a weak external driving field.

    Original languageEnglish (US)
    Pages (from-to)454-459
    Number of pages6
    JournalJournal of Applied Physics
    Volume75
    Issue number1
    DOIs
    StatePublished - Dec 1 1994

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    domain wall
    ceramics
    temperature dependence
    evaluation
    ferroelectric materials
    permittivity
    temperature
    room temperature

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

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    title = "Direct evaluation of domain-wall and intrinsic contributions to the dielectric and piezoelectric response and their temperature dependence on lead zirconate-titanate ceramics",
    abstract = "By making use of the fact that domain-wall motions do not produce volumetric changes, an experimental method is introduced to directly and quantitatively determine the domain-wall and intrinsic contributions to the piezoelectric and dielectric responses of a ferroelectric material. Utilizing this method, the contributions from the domain walls and intrinsic part as well as their temperature dependence for lead zirconate-titanate (PZT) 52/48 and PZT-500 ceramics are evaluated. The data show that at temperatures below 300 K, the large change in the dielectric and piezoelectric constants with temperature is due to the change in the domain-wall activities in the materials. The results confirm that most of the dielectric and piezoelectric responses at room temperature for the materials studied is from the domain-wall contributions. The data also indicate that in PZT-500, both 180°wall and non-180°walls are possibly active under a weak external driving field.",
    author = "Qiming Zhang and H. Wang and N. Kim and Cross, {L. E.}",
    year = "1994",
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    TY - JOUR

    T1 - Direct evaluation of domain-wall and intrinsic contributions to the dielectric and piezoelectric response and their temperature dependence on lead zirconate-titanate ceramics

    AU - Zhang, Qiming

    AU - Wang, H.

    AU - Kim, N.

    AU - Cross, L. E.

    PY - 1994/12/1

    Y1 - 1994/12/1

    N2 - By making use of the fact that domain-wall motions do not produce volumetric changes, an experimental method is introduced to directly and quantitatively determine the domain-wall and intrinsic contributions to the piezoelectric and dielectric responses of a ferroelectric material. Utilizing this method, the contributions from the domain walls and intrinsic part as well as their temperature dependence for lead zirconate-titanate (PZT) 52/48 and PZT-500 ceramics are evaluated. The data show that at temperatures below 300 K, the large change in the dielectric and piezoelectric constants with temperature is due to the change in the domain-wall activities in the materials. The results confirm that most of the dielectric and piezoelectric responses at room temperature for the materials studied is from the domain-wall contributions. The data also indicate that in PZT-500, both 180°wall and non-180°walls are possibly active under a weak external driving field.

    AB - By making use of the fact that domain-wall motions do not produce volumetric changes, an experimental method is introduced to directly and quantitatively determine the domain-wall and intrinsic contributions to the piezoelectric and dielectric responses of a ferroelectric material. Utilizing this method, the contributions from the domain walls and intrinsic part as well as their temperature dependence for lead zirconate-titanate (PZT) 52/48 and PZT-500 ceramics are evaluated. The data show that at temperatures below 300 K, the large change in the dielectric and piezoelectric constants with temperature is due to the change in the domain-wall activities in the materials. The results confirm that most of the dielectric and piezoelectric responses at room temperature for the materials studied is from the domain-wall contributions. The data also indicate that in PZT-500, both 180°wall and non-180°walls are possibly active under a weak external driving field.

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