Direct experimental evidence for a dominant hole trapping center in SIMOX oxides

John F. Conlev, Patrick M. Lenahan, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

There is significant interest in the application of siliconon-insulator (SOI) technologies in environments requiring substantial radiation hardness. In such environments, trapping of charge carriers in the buried oxide is of some concern. We have begun to explore trapping centers in SIMOX buried oxides using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/λ- = 10.2 ev) and ultraviolet (hc/λ = 5 ev) irradiation sequences. In this abstract, we present experimental evidence which strongly indicates that E' centers or E' like centers play an important role in hole trapping in SIMOX oxides. The E' center is a silicon back-bonded to three oxygen atoms; in thermally grown SiO2 films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages164-165
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period10/2/9010/4/90

Fingerprint

Oxides
Silicon
Hole traps
Oxygen vacancies
Charge carriers
Paramagnetic resonance
Hardness
Irradiation
Vacuum
Oxygen
Radiation
Atoms

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Conlev, J. F., Lenahan, P. M., & Roitman, P. (1990). Direct experimental evidence for a dominant hole trapping center in SIMOX oxides. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 164-165). [145763] (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145763
Conlev, John F. ; Lenahan, Patrick M. ; Roitman, P. / Direct experimental evidence for a dominant hole trapping center in SIMOX oxides. 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. pp. 164-165 (1990 IEEE SOS/SOI Technology Conference, Proceedings).
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Conlev, JF, Lenahan, PM & Roitman, P 1990, Direct experimental evidence for a dominant hole trapping center in SIMOX oxides. in 1990 IEEE SOS/SOI Technology Conference, Proceedings., 145763, 1990 IEEE SOS/SOI Technology Conference, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 164-165, 1990 IEEE SOS/SOI Technology Conference, Key West, United States, 10/2/90. https://doi.org/10.1109/SOSSOI.1990.145763

Direct experimental evidence for a dominant hole trapping center in SIMOX oxides. / Conlev, John F.; Lenahan, Patrick M.; Roitman, P.

1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. p. 164-165 145763 (1990 IEEE SOS/SOI Technology Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Conlev JF, Lenahan PM, Roitman P. Direct experimental evidence for a dominant hole trapping center in SIMOX oxides. In 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc. 1990. p. 164-165. 145763. (1990 IEEE SOS/SOI Technology Conference, Proceedings). https://doi.org/10.1109/SOSSOI.1990.145763